DDR3


Wizerunek KLUCZOWY Nr części / Producent Opis / PDF Ilość / zapytanie ofertowe
K4B1G0846I-BCK0

K4B1G0846I-BCK0

Samsung Semiconductor

1 Gb 128M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

16579szt. Magazyn

K4B1G0846I-BCMA

K4B1G0846I-BCMA

Samsung Semiconductor

1 Gb 128M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

17745szt. Magazyn

K4B1G0846I-BCNB

K4B1G0846I-BCNB

Samsung Semiconductor

1 Gb 128M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

24938szt. Magazyn

K4B1G0846I-BMK0

K4B1G0846I-BMK0

Samsung Semiconductor

1 Gb 128M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

18031szt. Magazyn

K4B1G0846I-BMMA

K4B1G0846I-BMMA

Samsung Semiconductor

1 Gb 128M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

14414szt. Magazyn

K4B1G0846I-BYK0

K4B1G0846I-BYK0

Samsung Semiconductor

1 Gb 128M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

17047szt. Magazyn

K4B1G0846I-BYMA

K4B1G0846I-BYMA

Samsung Semiconductor

1 Gb 128M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

14807szt. Magazyn

K4B1G0846I-BYNB

K4B1G0846I-BYNB

Samsung Semiconductor

1 Gb 128M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

21953szt. Magazyn

K4B1G1646I-BCK0

K4B1G1646I-BCK0

Samsung Semiconductor

1 Gb 64M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

25065szt. Magazyn

K4B1G1646I-BCMA

K4B1G1646I-BCMA

Samsung Semiconductor

1 Gb 64M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

19161szt. Magazyn

K4B1G1646I-BCNB

K4B1G1646I-BCNB

Samsung Semiconductor

1 Gb 64M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

19667szt. Magazyn

K4B1G1646I-BFMA

K4B1G1646I-BFMA

Samsung Semiconductor

1 Gb 64M x 16 1866 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

26803szt. Magazyn

K4B1G1646I-BHMA

K4B1G1646I-BHMA

Samsung Semiconductor

1 Gb 64M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production.

21607szt. Magazyn

K4B1G1646I-BMK0

K4B1G1646I-BMK0

Samsung Semiconductor

1 Gb 64M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

26686szt. Magazyn

K4B1G1646I-BMMA

K4B1G1646I-BMMA

Samsung Semiconductor

1 Gb 64M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

15187szt. Magazyn

K4B1G1646I-BYK0

K4B1G1646I-BYK0

Samsung Semiconductor

1 Gb 64M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

21190szt. Magazyn

K4B1G1646I-BYMA

K4B1G1646I-BYMA

Samsung Semiconductor

1 Gb 64M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

20093szt. Magazyn

K4B1G1646I-BYNB

K4B1G1646I-BYNB

Samsung Semiconductor

1 Gb 64M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

22839szt. Magazyn

K4B2G0846F-BCK0

K4B2G0846F-BCK0

Samsung Semiconductor

2 Gb 256M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

26738szt. Magazyn

K4B2G0846F-BCMA

K4B2G0846F-BCMA

Samsung Semiconductor

2 Gb 256M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

24877szt. Magazyn