Samsung Semiconductor - K4B4G0846R-BHMA

KEY Part #: K7359686

[24090szt. Magazyn]

Numer części:: K4B4G0846R-BHMA

Producent:: Samsung Semiconductor

Szczegółowy opis:: 4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 105 °C 78FBGA Mass Production.

Manufacturer's standard lead time:: W magazynie

Okres ważności:: Rok

Chip z:: Hongkong

RoHS:

Metoda płatności:

Sposób wysyłki:

Kategorie rodzinne:: KEY Components Co., LTD jest dystrybutorem komponentów elektronicznych, który oferuje kategorie produktów, w tym: LPDDR4X, SLC Nand, DDR4, LPDDR4, HBM Flarebolt, LPDDR5, LPDDR3 and MODULE ...

Przewaga konkurencyjna:: We specialize in Samsung Semiconductor K4B4G0846R-BHMA electronic components. K4B4G0846R-BHMA can be shipped within 24 hours after order. If you have any demands for K4B4G0846R-BHMA, Please submit a Request for Quotation here or send us an email: [email protected]

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

K4B4G0846R-BHMA Cechy produktu

Numer części : K4B4G0846R-BHMA

Producent : Samsung Semiconductor

Opis : 4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 105 °C 78FBGA Mass Production

Seria : DDR3

Gęstość : 4 Gb

Org. : 512M x 8

Prędkość : 1866 Mbps

Napięcie : 1.35 V

Temp. : -40 ~ 105 °C

Pakiet : 78FBGA

Stan produktu : Mass Production

Najnowsze wiadomości

Speed for the next generation of mobile devices

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Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering

Evolving Mobile Solutions: Samsung at MWC 2018

Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP

Inside the building blocks of the 5G future

Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package

Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM

The future of NAND technology

Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology

Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day

Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology

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